BJT Transistors, Flip-Flops, and Op-Amps (C State/National)
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.
Figures (10)
Key Points
- An NPN transistor comprises two semiconductor junctions that share a thin p-doped region, and a PNP transistor comprises two semiconductor junctions that share a thin n-doped region.
- Biasing is the setting of the DC operating point of an electronic component.
- Some basic circuits can be designed by assuming that the base–emitter voltage is approximately constant and that collector current is β times the base current.
- Collector current and emitter current are related by Ic = α Ie with α ≈ 1, so the increase in emitter current with temperature is opposed, and the operating point is kept stable.
- The common-emitter current gain is represented by βF or the h-parameter hFE; it is approximately the ratio of the collector's direct current to the base's direct current in forward-active region.
- Unlike the JK flip-flop, the 11 input combination for the JK latch is not very useful because there is no clock that directs toggling.
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- Wikipedia contributors — en.wikipedia.org/wiki/Bipolar_junction_transistor (Creative Commons Attribution-ShareAlike 4.0)
- Wikipedia contributors — en.wikipedia.org/wiki/Bipolar_transistor_biasing (Creative Commons Attribution-ShareAlike 4.0)
- Wikipedia contributors — en.wikipedia.org/wiki/Flip-flop_(electronics) (Creative Commons Attribution-ShareAlike 4.0)
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